MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide single crystal having a high crystal quality.SOLUTION: A manufacturing method of a silicon carbide single crystal includes the steps of: bonding a seed crystal 20 consisting of silicon carbide and a support part 21 consisting of graphite; preparing silicon carbide raw material 40; and growing a silicon carbide single crystal 50 by sublimating the silicon carbide raw material 40 on a main surface 20a of the seed crystal 20 which is bonded to the support part 21. The growing step includes a step in which a temperature of the support part 21 is higher than that of the seed crystal 20. A thermal expansion coefficient of the support part 21 is 0.7 times or more and 0.9 times or less of the thermal expansion coefficient of the seed crystal 20.