发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, MEMORY CONTROLLER, AND MEMORY SYSTEM
摘要 A nonvolatile semiconductor memory device includes a memory cell array that share a plurality of bit lines, each block unit including a plurality of memory cells for storing user data and at least one memory cell for storing flag data indicating whether the block unit is defective, and a control unit configured to read the flag data from a block unit during a read operation or a write operation on the block unit, and when the flag data indicates the block unit is defective, discontinue the read operation and the write operation on the block unit.
申请公布号 US2015049549(A1) 申请公布日期 2015.02.19
申请号 US201414189929 申请日期 2014.02.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ASAOKA Norichika
分类号 G11C16/10 主分类号 G11C16/10
代理机构 代理人
主权项 1. A nonvolatile semiconductor memory device comprising: a memory cell array including a plurality of block units that share a plurality of bit lines, each block unit including a plurality of memory cells for storing user data and at least one memory cell for storing flag data indicating whether the block unit is defective; a control unit configured to read the flag data from a block unit during a read operation or a write operation on the block unit, and when the flag data indicates the block unit is defective, discontinue the read operation and the write operation on the block unit.
地址 Tokyo JP