发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, MEMORY CONTROLLER, AND MEMORY SYSTEM |
摘要 |
A nonvolatile semiconductor memory device includes a memory cell array that share a plurality of bit lines, each block unit including a plurality of memory cells for storing user data and at least one memory cell for storing flag data indicating whether the block unit is defective, and a control unit configured to read the flag data from a block unit during a read operation or a write operation on the block unit, and when the flag data indicates the block unit is defective, discontinue the read operation and the write operation on the block unit. |
申请公布号 |
US2015049549(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201414189929 |
申请日期 |
2014.02.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ASAOKA Norichika |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile semiconductor memory device comprising:
a memory cell array including a plurality of block units that share a plurality of bit lines, each block unit including a plurality of memory cells for storing user data and at least one memory cell for storing flag data indicating whether the block unit is defective; a control unit configured to read the flag data from a block unit during a read operation or a write operation on the block unit, and when the flag data indicates the block unit is defective, discontinue the read operation and the write operation on the block unit. |
地址 |
Tokyo JP |