SEMICONDUCTOR DEVICE HAVING A III-V CRYSTALLINE COMPOUND MATERIAL SELECTIVELY GROWN ON THE BOTTOM OF A SPACE FORMED IN A SINGLE ELEMENT SUBSTRATE.

摘要

A method for forming a crystalline compound material on a single element substrate includes etching a high aspect ratio trench in a single element crystalline substrate and forming a dielectric layer over the substrate and on sidewalls and a bottom of the trench. The dielectric is removed from the bottom of the trench to expose the substrate at the bottom of the trench. A crystalline compound material is selectively grown on the substrate at the bottom of the trench.

主权项

1. A semiconductor device, comprising:
a single element substrate; a subsurface space formed in the single element crystalline substrate; a dielectric layer formed over the substrate and on sidewalls of the space; and a III-V crystalline compound material selectively grown on the substrate at the bottom of the space.