| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of reducing a signal charge remaining in a photoelectric conversion element without being transferred to a floating diffusion, and to provide a method of manufacturing a solid-state imaging device.SOLUTION: According to one embodiment of the present invention, the solid-state imaging device is provided. The solid-state imaging device includes a first conductivity type semiconductor region and a second conductivity type semiconductor region. The first conductivity type semiconductor region is provided for each pixel of a captured image. The second conductivity type semiconductor region forms a PN junction with the first conductivity type semiconductor region to constitute a photoelectric conversion element. In the second conductivity type semiconductor region, the concentration of a second conductivity type impurity decreases from the center of the photoelectric conversion element toward a transfer gate for signal charge transfer. |
