发明名称 THERMAL TREATMENT DEVICE AND FILM FORMATION SYSTEM
摘要 <p>PROBLEM TO BE SOLVED: To properly perform thermal treatment of a substrate where multiple circuits are formed on a surface while simplifying the structure of a thermal treatment device.SOLUTION: A second thermal treatment device 34 includes: a processing container 230 which houses multiple wafers W; multiple heating plates 240 which are provided at multiple tiers in the processing container 230 and hold the respective wafers W to perform thermal treatment to the wafers W; a temperature control unit 210 which is provided at the exterior of the processing container 230 and controls temperatures of the wafers W, which have been subject to the thermal treatment by the heating plates 240, to a predetermined temperature; transition units 211, 212 for carrying in/out the wafers W from/to the exterior; a buffer unit 213 which is provided at the exterior of the processing container 230 and temporarily houses the multiple wafers W; and a wafer transfer mechanism 221 which transfers the wafers W.</p>
申请公布号 JP2015035583(A) 申请公布日期 2015.02.19
申请号 JP20140106084 申请日期 2014.05.22
申请人 TOKYO ELECTRON LTD 发明人 HIRAKAWA OSAMU;TERADA SHOJI;HARA SHOGO
分类号 H01L21/02;H01L21/027;H01L21/31;H01L21/677 主分类号 H01L21/02
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