发明名称 Method of design and growth of single-crystal 3D nanostructured solar cell or detector
摘要 Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices.
申请公布号 US2015047702(A1) 申请公布日期 2015.02.19
申请号 US201414531492 申请日期 2014.11.03
申请人 The Board of Trustees of the Leland Stanford Junior University 发明人 Gu Anjia;Huo Yijie;Liang Dong;Kang Yangsen;Harris, JR. James S.
分类号 H01L31/0236;H01L31/0352 主分类号 H01L31/0236
代理机构 代理人
主权项 1. A photovoltaic device comprising: a nano-structured semiconductor substrate having a plurality of nano-scale protrusions disposed to create nano-scale substrate hills and nano-scale substrate valleys; a multi-layer semiconductor structure conformally deposited on the substrate, whereby the multi-layer semiconductor structure has nano-scale device hills and nano-scale device valleys that correspond to the substrate hills and substrate valleys; an electrical insulator disposed in the device valleys; and a top electrode disposed on the multi-layer semiconductor structure and electrical insulator such that the top electrode makes contact with a top layer of the multi-layer structure only where the top layer is not covered by the electrical insulator; wherein the multi-layer semiconductor structure has defects beneath the electrical insulator that are formed by merging of independent regions during growth, and wherein the electrical insulator disposed in the device valleys prevents electrical shorting of the photovoltaic device by the defects.
地址 Palo Alto CA US