| 摘要 |
<p>A laser processing method whereby a plate-shaped object to be processed (1), comprising a hexagonal crystal SiC substrate (12) having a surface (12a) that forms an angle equivalent to the off-angle relative to the c-plane, is prepared. Modified regions (7a, 7m) are then formed inside the SiC substrate (12) along planned cutting lines (5a, 5m), by irradiating a laser light (L). Along the cutting line (5a) parallel to the surface (12a) and the a-plane, the modified region (7a) second closest to a laser light incidence surface is made smaller than the modified region (7a) closest to the laser light incidence surface. Along the cutting line (5m) parallel to the surface (12a) and the m-plane, the modified region (7m) closest to the laser light incidence surface is made smaller than the modified region (7m) second closest to the laser light incidence surface.</p> |
