Conversion of thin transistor elements from silicon to silicon germanium

摘要

Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.

主权项

1. A method comprising:
providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon; forming a cladding layer comprising germanium on the channel body; forming a capping layer on the cladding layer to cover substantially all material of the cladding layer to prevent flow of the germanium during annealing of the channel body; and annealing the channel body to cause the germanium to diffuse into the channel body, wherein forming the capping layer is performed prior to annealing the channel body and wherein annealing the channel body is performed with the capping layer disposed on the cladding layer.