Semiconductor light emitting device and manufacturing method of the same

摘要

According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

主权项

1. A semiconductor light emitting device comprising:
a first nitride semiconductor layer having a first face and a second face opposite to the first face, the second face having a p-side region and an n-side region; a nitride semiconductor light emitting layer provided on the p-side region of the second face of the first nitride semiconductor layer; a second nitride semiconductor layer provided on the nitride semiconductor light emitting layer; a p-side electrode provided on the second nitride semiconductor layer; and an n-side electrode provided on the n-side region of the second face of the first nitride semiconductor layer, the nitride semiconductor light emitting layer having a first concave-convex face provided on the first nitride semiconductor layer side thereof, and a second concave-convex face provided on the second nitride semiconductor layer side thereof, the first concave-convex face including a plurality of concave portions and a plurality of convex portions, the second concave-convex face including a plurality of concave portions and a plurality of convex portions, wherein the p-side electrode and the n-side electrode are not provided on the first face of the first nitride semiconductor layer, and the first face of the first nitride semiconductor layer opposite to the p-side region and the n-side region is a concave-convex face.