| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for evaluating a semiconductor element, capable of easily and quickly measuring oxide film breakdown voltage distribution without using a device for forming a CVD film, a photolithography step, and an etching step.SOLUTION: A method for evaluating a semiconductor substrate by evaluating insulation characteristics of an oxide film formed on the semiconductor substrate comprises the steps of: forming an oxide film on a surface of the semiconductor substrate; removing the oxide film formed on a rear surface of the semiconductor substrate; holding the semiconductor substrate on which the oxide film is formed on a substrate holding base connected to an ammeter; and relatively moving the semiconductor substrate with respect to a corona charge in a horizontal direction while applying the corona charge from above the oxide film and measuring the current flowing through the oxide film at each point of the semiconductor substrate with the ammeter. |
