| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a TFT, an active matrix substrate, and a manufacturing method for the TFT and the active matrix substrate, that can achieve high display quality. <P>SOLUTION: A thin film transistor comprises: a gate electrode 2a; a gate insulation film 3 provided covering the gate electrode 2a; a semiconductor film 5 disposed on the gate insulation film 3 and over the gate electrode; a source electrode 7 provided on the semiconductor film 5 and electrically connected to the semiconductor film 5; a drain electrode 9 provided on the semiconductor film 5 and electrically connected to the semiconductor film 5; and a low-reflection film 6 provided between the gate insulation film 3 and at least one of the source electrode 7 and the drain electrode 9 and disposed separate from the semiconductor film 5. Outside the gate electrode 2a in a plan view, the low-reflection film 6 has approximately the same shape as, or is larger than the pattern of the source electrode 7 and the drain electrode 9. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
