发明名称 MEMORY DEVICE AND MEMORY PROGRAMMING METHOD
摘要 <p>PURPOSE: A memory device and a memory programming method are provided to control compensation of channel distortion, thereby reducing errors while reading/programming a data page. CONSTITUTION: A multi level cell array(110) comprises a plurality of multi level cells. A programming unit(120) programs the first data page in the plurality of multi level cells. The programming unit programs the second data page in the multi level cells. A BER analyzing unit(130) analyzes a bit error rate from a bit stream channel. The bit stream channel is generated from the first page data or the second page data. A controller(140) determines how distorted a channel is about the bit stream channel. The controller controls compensation about channel distortion.</p>
申请公布号 KR101492857(B1) 申请公布日期 2015.02.12
申请号 KR20080136710 申请日期 2008.12.30
申请人 发明人
分类号 G11C16/04;G11C16/06;G11C16/10;G11C16/34 主分类号 G11C16/04
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