SYSTEM AND METHOD FOR FORMING A SILICON WAFER

摘要

An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth.

主权项

1. An apparatus for forming a crystalline ribbon from a source of molten silicon comprising:
first and second heating electrodes; a crucible configured to hold molten silicon, having a surface of the molten silicon, the crucible having a formation portion, said formation portion having a flange member that supports and holds the molten silicon between the flange member and the crystalline ribbon, the flange member being angled with respect to the surface of the molten silicon and defining a surface texture configured to hold molten silicon and reduce turbulence of the molten silicon flowing over the surface texture, the molten silicon being heated by the first and second heating electrodes; the first heating electrode positioned below the surface of the molten silicon, comprising a temperature regulator in thermally conductive relation to the ribbon configured to melt a wedge portion of the crystalline ribbon to form a growth zone and subsequently stabilize the temperature surrounding the wedge portion of the crystalline ribbon; the second heating electrode positioned below surface of the molten silicon, configured to maintain the temperature of the molten silicon, wherein second electrode is in capacitively conductive relation with both the first heating electrode and the molten silicon through the molten silicon from the first heating electrode past the crystalline ribbon; a controller configured to control application of RF energy to the molten silicon by the first and second heating electrodes; and a pulling mechanism configured to cause relative motion of the crystalline ribbon parallel to the first heating electrode.