发明名称 成膜装置
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a film forming device capable of efficiently producing thin films without ion damage while preventing peeling between the thin films. <P>SOLUTION: The film forming device includes: a first film forming treatment apparatus 13 and a second film forming treatment apparatus 15 in which a thin film is formed on a substrate S; and a surface treatment apparatus 14 in which hydrogen gas supplied in a reaction chamber 141 is brought into contact with a catalyst body to generate radical and the radical is supplied to the substrate S to perform surface treatment of the substrate S. The surface treatment apparatus 14 is provided to perform the surface treatment of the substrate S at the backward of the first film forming treatment apparatus 13 and the forward of the second film forming treatment apparatus 15. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5669306(B2) 申请公布日期 2015.02.12
申请号 JP20100267795 申请日期 2010.11.30
申请人 发明人
分类号 C23C14/02;C23C14/58 主分类号 C23C14/02
代理机构 代理人
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