| 发明名称 |
Integrating Junction Formation of Transistors with Contact Formation |
| 摘要 |
A method includes forming a gate stack over a semiconductor region, depositing an impurity layer over the semiconductor region, and depositing a metal layer over the impurity layer. An annealing is then performed, wherein the elements in the impurity layer are diffused into a portion of the semiconductor region by the annealing to form a source/drain region, and wherein the metal layer reacts with a surface layer of the portion of the semiconductor region to form a source/drain silicide region over the source/drain region. |
| 申请公布号 |
US2015044842(A1) |
申请公布日期 |
2015.02.12 |
| 申请号 |
US201313963911 |
申请日期 |
2013.08.09 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wang Li-Ting;Tsai Teng-Chun;Lin Chun-Hsiung;Lin Cheng-Tung;Chen Chi-Yuan;Lee Hong-Mao;Chang Huicheng |
| 分类号 |
H01L29/66;H01L21/225;H01L21/762 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a gate stack over a semiconductor region; depositing an impurity layer over the semiconductor region; depositing a metal layer over the impurity layer; and performing an annealing, wherein elements in the impurity layer are diffused into a portion of the semiconductor region by the annealing to form a source/drain region, and wherein the metal layer reacts with a surface layer of the portion of the semiconductor region to form a source/drain silicide region over the source/drain region. |
| 地址 |
Hsin-Chu TW |
