发明名称 |
EXTREMELY HIGH FREQUENCY DUAL-MODE CLASS AB POWER AMPLIFIER |
摘要 |
An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a PSAT of 17.4 dBm with 29.3% PAE in high power mode and a PSAT of 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design. |
申请公布号 |
EP2834916(A1) |
申请公布日期 |
2015.02.11 |
申请号 |
EP20130714313 |
申请日期 |
2013.04.05 |
申请人 |
ST-ERICSSON SA |
发明人 |
DIETER, JOOS;PHILIBERT, WIM;REYNAERT, PATRICK;ZHAO, DIXIAN |
分类号 |
H03F3/195;H03F1/02;H03H7/48 |
主分类号 |
H03F3/195 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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