发明名称 Surface metal wiring structure for an IC substrate
摘要 A surface metal wiring structure for a substrate includes one or more functional μbumps formed of a first metal and an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps. The surface metal wiring structure also includes a plurality of sacrificial μbumps formed of the first metal that are electrically connected to the electrical test pads, where the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps.
申请公布号 US8953336(B2) 申请公布日期 2015.02.10
申请号 US201213412958 申请日期 2012.03.06
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Kao Chin-Fu;Chiou Wen-Chih;Lin Jing-Cheng;Huang Cheng-Lin;Tsai Po-Hao
分类号 H05K7/10 主分类号 H05K7/10
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. A surface metal wiring structure for a substrate comprising: one or more functional μbumps formed of a first metal; an electrical test pad formed of a second metal for receiving an electrical test probe and electrically connected to the one or more functional μbumps, wherein the first and second metals are different; a plurality of sacrificial μbumps formed of the first metal and electrically connected to the electrical test pad, wherein the sacrificial μbumps are positioned closer to the electrical test pad than the one or more functional μbumps, wherein the electrical connection between the plurality of sacrificial μbumps and the test pad provides a pathway for a galvanic process having a lower electrical resistance than the electrical connection between the functional μbumps and the test pad.
地址 Hsin-Chu TW