| 发明名称 | TFT, mask for manufacturing the TFT, array substrate and display device | ||
| 摘要 | Embodiments of the invention relate to a TFT, a mask for manufacturing the TFT, an array substrate and a display device. A channel of the TFT is formed by using a single slit mask. The channel of the TFT has a bent portion and extension portions provided on both sides of the bent portion, and a channel width of the bent portion is larger than a channel width of the extension portion. | ||
| 申请公布号 | US8952384(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201213883858 | 申请日期 | 2012.12.06 |
| 申请人 | BOE Technology Group Co., Ltd. | 发明人 | Choi Seungjin;Yoo Seongyeol;Song Youngsuk |
| 分类号 | H01L29/04 | 主分类号 | H01L29/04 |
| 代理机构 | Ladas & Parry LLP | 代理人 | Ladas & Parry LLP |
| 主权项 | 1. A thin film transistor, a channel of which being formed by using a single slit mask, wherein the channel of the thin film transistor has a U shape and comprises a bent portion and extension portions, the bent portion is provided at a bottom of the U shape, the extension portions are provided on both sides of the U shape, and a channel width of the bent portion is larger than a channel width of the extension portion. | ||
| 地址 | Beijing CN | ||