Exposure apparatus, exposure method, and method of manufacturing semiconductor device

摘要

An exposure apparatus according to an embodiment controls the positioning between layers using an alignment correction value calculated on the basis of lower layer position information of a lower-layer-side pattern and upper layer position information of an upper-layer-side pattern. The lower layer position information includes alignment data, a focus map, and a correction value which is set on the basis of the previous substrate. The upper layer position information includes alignment data, a focus map, and a correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred.

主权项

1. An exposure apparatus comprising:
an exposure unit that irradiates exposure light to an original plate on which a mask pattern is formed to transfer a pattern corresponding to the mask pattern to a substrate; and a control unit that controls the exposure unit, wherein the exposure unit includes: an alignment data measuring unit that measures alignment data for the substrate; and a focus map measuring unit that measures a focus map of the substrate, the control unit includes an alignment correction value calculating unit that calculates an alignment correction value used when an upper-layer-side pattern is positioned relative to a lower-layer-side pattern of an exposure target substrate, which is a substrate to be exposed, on the basis of lower-layer-side position information about a position of the lower-layer-side pattern and upper-layer-side position information about a position of the upper-layer-side pattern which is transferred to the exposure target substrate, the lower-layer-side position information includes: lower layer alignment data which is alignment data measured when the lower-layer-side pattern is transferred; a lower layer focus map which is a focus map measured when the lower-layer-side pattern is transferred; and a lower layer correction value which is used when the lower-layer-side pattern is formed and is a correction value for the positioning that is set on the basis of a history of a positional deviation between a lower-layer-side pattern and an upper-layer-side pattern acquired from a substrate which is exposed earlier than the exposure target substrate, the upper-layer-side position information includes: upper layer alignment data which is alignment data measured by the alignment data measuring unit when the upper-layer-side pattern is transferred; an upper layer focus map which is a focus map measured by the focus map measuring unit when the upper-layer-side pattern is formed; and an upper layer correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred, and the control unit controls the positioning of the upper-layer-side pattern relative to the lower-layer-side pattern using the alignment correction value calculated by the alignment correction value calculating unit.