METHOD OF FORMING HIGH-QUALITY HETEROSTRUCTURES OF LIGHT-EMITTING DIODES

摘要

FIELD: physics.SUBSTANCE: invention can be used to produce high-quality semiconductor light-emitting diodes (LED) based on heterostructures of ABcompounds. The method includes irradiating a plate with heterostructures with integral electron flux with density of 10-10el/cmand energy of 0.3-10 MeV at a temperature not higher than minus 70°C, followed by rapid thermal annealing at a temperature higher than 600°C with photon flux in the visible spectrum with radiation intensity of 1-10 W/cm and energy higher than the band-gap of the semiconductor layer of the heterojunction the narrowest band-gap.EFFECT: high injection capacity and external quantum efficiency of heterostructures of light-emitting diodes.1 dwg