METHOD OF FORMING NANOSIZED FILM OF TUNGSTEN CARBIDE

摘要

FIELD: nanotechnology.SUBSTANCE: invention relates to the field of nanotechnology and nanoelectronics. The method of forming the nanosized film of tungsten carbide comprises application on the semiconductor or dielectric substrate in the process of pulsed-plasma deposition on the dual channel unit of pulsed deposition electroerosion arc plasma of two-layer structure of coating with a total thickness of 5 nm, consisting of a film of tungsten and the carbon film, and carbothermic synthesis in vacuum with the pressure not greater than 5·10Pa and the temperature of not more than 450°C for not more than 10 minutes with heating and cooling rate of not less than 25 deg/min with a ratio of the thicknesses of tungsten and carbon films of 5:1 and 3.5:1.EFFECT: invention provides the ability of formation of films of tungsten carbide in the technology of silicon integrated circuit as diffusion barriers and superhard coatings.3 cl, 7 dwg