PRODUCTION METHOD OF ALUMINUM NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To obtain high-quality aluminum nitride crystal stably in a liquid phase growth method for epitaxially growing an AlN crystal on a nitrided sapphire substrate of a seed crystal substrate by using a Ga-Al alloy melt.SOLUTION: A nitrided sapphire substrate whose top surface is subjected to an oxidation treatment is used as a seed crystal substrate 3, and nitrogen-containing gas is introduced into a Ga-Al alloy melt 5, to thereby epitaxially grow an aluminum nitride crystal on the seed crystal substrate 3 in the Ga-Al alloy melt 5.