METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device including: preparing a semiconductor substrate with a gate oxide layer on the top thereof; depositing a polycrystalline silicon layer on the top of the semiconductor substrate; depositing a protection layer overlying the top of the polycrystalline silicon layer; etching the protection layer and the polycrystalline silicon layer to form a gate body block; forming an oxide layer overlying the gate body block and the semiconductor substrate; polishing the oxide layer through Chemical Mechanical Polishing (CMP) until the top of the gate body block; removing the protection layer on the top of the gate body block; and forming a metal silicide layer on the gate body block.

主权项

1. A method for manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate with a gate oxide layer on the top thereof; depositing a polycrystalline silicon layer on the gate oxide layer; depositing a protection layer overlying the top of the polycrystalline silicon layer; etching the protection layer and the polycrystalline silicon layer to form a gate body block including the protection layer and the polycrystalline silicon layer in that order from top to bottom, which remain after being etching; forming an oxide layer overlying the gate body block and the semiconductor substrate; polishing the oxide layer through Chemical Mechanical Polishing, CMP, until the top of the gate body block; removing the protection layer on the top of the gate body block; and forming a metal silicide layer on the gate body block with the protection layer removed.