发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 In cases where a recessed and projected pattern is formed in a light extraction surface, which is formed of a semiconductor crystal, by wet etching using an alkaline solution, it has been impossible to form a plurality of projected parts in a desired arrangement. A method for manufacturing a semiconductor light emitting element which is provided with a light extraction surface that is formed of a semiconductor crystal. In this method, in order to form a recessed and projected pattern in a light extraction surface (7) by means of a plurality of projected parts (15), firstly, a plurality of impressions (14) are formed, with use of a processing substrate (11), in the light extraction surface (7) of a semiconductor layer (6) that is formed of a semiconductor crystal, and then, projected parts (15) are formed by wet etching the light extraction surface (7) with use of an alkaline solution, each of said projected parts (15) having the top thereof at the position where an impression (14) is formed, while having a plurality of facet surfaces of the semiconductor crystal as the lateral surfaces thereof.
申请公布号 WO2015016246(A1) 申请公布日期 2015.02.05
申请号 WO2014JP70026 申请日期 2014.07.30
申请人 DOWA ELECTRONICS MATERIALS CO., LTD. 发明人 KADOWAKI YOSHITAKA
分类号 H01L33/22;H01L33/32 主分类号 H01L33/22
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