| 发明名称 |
INVERSE SIDE-WALL IMAGE TRANSFER |
| 摘要 |
Methods forming structures on a chip. The methods include etching a mandrel layer that is disposed over a bottom layer to be patterned to form gaps between plateaus of mandrel material; forming spacers on sidewalls of the plateaus; forming a hardmask material in gaps between the spacers; removing the spacers to define a pattern around the hardmask material; and etching the bottom layer according to the pattern around the hardmask material. |
| 申请公布号 |
US2015035064(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201313956980 |
申请日期 |
2013.08.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Reznicek Alexander |
| 分类号 |
H01L27/088;H01L21/306 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming structures on a chip, comprising:
etching a mandrel layer that is disposed over a bottom layer to be patterned to form gaps between plateaus of mandrel material; forming spacers on sidewalls of the plateaus; forming a hardmask material in gaps between the spacers; removing the spacers to define a pattern around the hardmask material; and etching the bottom layer according to the pattern around the hardmask material. |
| 地址 |
Armonk NY US |
