METHODS OF PROVIDING PATTERNED TEMPLATES FOR SELF-ASSEMBLABLE BLOCK COPOLYMERS FOR USE IN DEVICE LITHOGRAPHY

摘要

A method is disclosed to form a patterned template on a substrate, to direct orientation of a self-assemblable block copolymer. The method involves providing a resist layer of a positive tone resist on the substrate and overexposing the resist with actinic (e.g. UV) radiation by photolithography to expose a continuous region of the resist layer with a sub-resolution unexposed resist portion at the interface between the resist and the substrate. The resist portion remaining at the interface, after removal of the exposed region, provides a basis for a chemical epitaxy template. The method may allow for simple, direct photolithography to form a patterned chemical epitaxy template and optionally include an accurately co-aligned graphoepitaxy feature and/or a substrate alignment feature.

主权项

1. A method of forming a patterned template, comprising a chemical epitaxy template, on a substrate, for orientation of a self-assemblable block copolymer comprising first and second polymer blocks, the method comprising:
providing a resist layer of a positive tone resist on the substrate, the resist layer having an interface with the substrate and an outer face opposed to the interface; selectively exposing a first portion of the resist layer with actinic radiation by a photolithographic method, leaving an unexposed portion at the outer face having a width greater than or equal to a critical dimension size of the photolithographic method, wherein the selective exposure is carried out with an intensity of actinic radiation sufficient to expose a continuous region of the resist layer between exposed portions, leaving an interfacial unexposed resist portion at the interface, having a width less than the critical dimension size of the photolithographic method; and removing the exposed resist layer, the unexposed resist portion left as first remaining resist portions at the interface, separated by a portion of bared substrate, wherein the first remaining resist portions provide a basis for the chemical epitaxy template of the patterned template.