发明名称 |
MOS TRANSISTORS AND FABRICATION METHOD THEREOF |
摘要 |
A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate; and forming a ploy silicon dummy gate structure having a high-K gate dielectric layer, a high-K gate dielectric protection layer containing nitrogen and a poly silicon dummy gate on the semiconductor substrate. The method also includes forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure. Further, the method includes removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen and performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate. Further, the method also includes forming a metal gate structure in the trench. |
申请公布号 |
US2015035084(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201314096286 |
申请日期 |
2013.12.04 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
LI FENGLIAN;NI JINGHUA |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a MOS transistor, comprising:
providing a semiconductor substrate; forming a ploy silicon dummy gate structure having a high-K gate dielectric layer on the semiconductor substrate, a high-K gate dielectric protection layer containing nitrogen on the high-K gate dielectric layer and a poly silicon dummy gate on the high-K gate dielectric protection layer on the semiconductor substrate; forming a source region and a drain region in the semiconductor substrate at both sides of the poly silicon dummy gate structure; removing the poly silicon dummy gate to form a trench exposing the high-K gate dielectric protection layer containing nitrogen; performing a nitrogen treatment process to repair defects in the high-K gate dielectric protection layer containing nitrogen caused by removing the poly silicon dummy gate; and forming a metal gate structure in the trench. |
地址 |
Shanghai CN |