发明名称 |
SILICON NITRIDE FILM, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%. |
申请公布号 |
US2015035058(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201414515770 |
申请日期 |
2014.10.16 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
TAKAYAMA Toru;YAMAZAKI Shunpei;AKIMOTO Kengo |
分类号 |
H01L29/51;H01L29/49 |
主分类号 |
H01L29/51 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |