| 摘要 |
<p>The present invention provides an apparatus and s method for processing a substrate. The apparatus for processing a substrate comprises: a chamber for providing a processing space to process a substrate inside; a substrate support unit for supporting the substrate in the processing space; a heater for heating the substrate supported by the substrate support unit; a gas supply unit for supplying processing gas to the processing space; an upper liner for protecting an upper wall by being coupled to the upper wall to cover the upper wall of the chamber in the processing space; and a temperature adjustment unit for adjusting the temperature of the upper wall and the upper liner. The temperature adjustment unit includes: cooling gas supply members for supplying cooling gas to a protection space which is formed between the upper wall and the upper liner; and s plurality of sensors for measuring the temperature of the upper liner. The cooling gas supply members and the sensors are two or more. As a result, the thermal deformation of a liner which covers the inside wall of a chamber can be prevented.</p> |
