发明名称 Dual-sided image sensor
摘要 An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions.
申请公布号 US8947572(B2) 申请公布日期 2015.02.03
申请号 US201013254421 申请日期 2010.05.24
申请人 OmniVision Technologies, Inc. 发明人 Venezia Vincent;Mao Duli;Tai Hsin-Chih
分类号 H04N3/14;H01L27/146 主分类号 H04N3/14
代理机构 Blakely Sokoloff Taylor & Zafman LLP 代理人 Blakely Sokoloff Taylor & Zafman LLP
主权项 1. A dual-sided image sensor including a pixel array, wherein each pixel of the pixel array comprises: a photosensitive region disposed within a single epitaxial layer; a metal stack disposed over a frontside of the single epitaxial layer and including an optical path through the metal stack to the photosensitive region for passing frontside incident light to the photosensitive region; a backside microlens disposed over a backside of the single epitaxial layer to direct backside incident light to the photosensitive region; pixel circuitry coupled to the photosensitive region to capture frontside image data and backside image data from the photosensitive region; and readout circuitry coupled to the pixel array to readout the frontside image data and the backside image data as a combination overlay image that combines the frontside image data with the backside image data, wherein the photosensitive region disposed within the single epitaxial layer receives light through the backside and the frontside of the single epitaxial layer.
地址 Santa Clara CA US