| 主权项 |
1. A method for fabricating a capacitor, comprising:
forming a storage node contact plug over a substrate; forming an etch stop layer over the storage node contact plug; forming an insulation layer over the etch stop layer; forming a first opening exposing a surface of the etch stop layer by etching a portion of the insulation layer; forming a second opening exposing only an entire surface of the storage node contact plug by etching a portion of the etch stop layer; forming a catalytic layer over the entire surface of the insulation layer including the first opening and the etch stop layer including the second opening; forming a conductive layer for a storage node over the entire surface of the catalytic layer; performing an isolation process to isolate parts of the conductive layer; removing the catalytic layer and the insulation layer formed over the etch stop layer, thereby allowing a remaining catalytic layer to cover a sidewall of the etch stop layer, the entire surface of a storage node contact plug, and a bottom portion of a conductive layer in the second opening; and sequentially forming a dielectric layer and a plate electrode over the isolated parts of the conductive layer, wherein forming the conductive layer for the storage node over the entire surface of the catalytic layer includes forming a layer of a material selected from the group consisting of ruthenium (Ru), platinum (Pt), iridium (Ir), rhodium (Rh), palladium (Pd), hafnium (Hf), a nitrided film thereof, and a conductive oxide layer. |
