Extended liner for localized thick copper interconnect

摘要

A dielectric layer overlies a semiconductor substrate. The substrate has components and appropriate contacts formed therein. The dielectric layer electrically insulates the substrate and components from overlying conductive interconnect layers. A barrier layer is arranged over the dielectric layer to isolate the interconnect layers from other structures. A copper layer is then deposited over the barrier layer and thick interconnect lines having a first width and a first height are realized. Then, the barrier layer is etched using one of many alternative techniques. The barrier layer has a second width and a second height wherein the second width of the barrier liner is selected to be greater than the first width of the thick copper interconnect.

主权项

1. A semiconductor structure, comprising:
a semiconductor substrate; a dielectric layer overlying the semiconductor substrate; a barrier layer overlying the dielectric layer, the barrier layer having a first width; and an electrically conductive interconnect positioned over and in contact with the barrier layer, the electrically conductive interconnect having a second width that is substantially less than the first width and a height of 5 to 50 microns, wherein the difference in widths between the barrier layer and the electrically conductive interconnect is sufficient to prevent the barrier layer from undercutting the electrically conductive interconnect during formation of the semiconductor structure.