| 摘要 |
<p>The present invention relates to an oxide semiconductor thin film transistor. The oxide semiconductor thin film transistor (10) has at least a source electrode and a drain electrode (14, 15), a gate electrode (12), and an oxide semiconductor layer (16). An active metal layer (17) touching the oxide semiconductor layer (16) is formed in the upper or the lower parts of the oxide semiconductor layer (16). The active metal layer (17) is formed with an island shape or a string shape formed in a direction vertical to the stacking direction of the oxide semiconductor layer, the gate electrode, and the source and the drain electrodes.</p> |
