| 摘要 |
一种选择性分离半导体元件的方法，系包含下列步骤：a.提供一基板具有一第一表面及一第二表面；b.提供复数个半导体磊晶叠层位于第一表面上，其中任一复数个半导体磊晶叠层包含一第一半导体磊晶叠层与一第二半导体磊晶叠层，且第二半导体磊晶叠层与第一半导体磊晶叠层隔开，其中第一半导体磊晶叠层与基板之间之黏着力不同于第二半导体磊晶叠层与基板之间之黏着力；c.自基板选择性地分离第一半导体磊晶叠层或第二半导体磊晶叠层。; b. providing a plurality of semiconductor stacking layers on the first surface, wherein the plurality of semiconductor stacking layers comprises a first semiconductor stacking layer and a second semiconductor stacking layer, and the first semiconductor stacking layer and the second semiconductor stacking layer are separated, wherein the adhesion force between the first semiconductor stacking layer and the substrate is different from that of the second semiconductor stacking layer and the substrate; c. selectively separating the first semiconductor stacking layer or the second semiconductor stacking layer from the substrate. |
