发明名称 |
Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices. |
摘要 |
<p>A high aspect ratio collimating mask for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by ion implantation during epitaxial growth of a crystal wafer.</p> |
申请公布号 |
EP0044372(A2) |
申请公布日期 |
1982.01.27 |
申请号 |
EP19810100498 |
申请日期 |
1981.01.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAUDHARI, PRAVEEN;CHOU, NED J.;FEDER, RALPH;FOWLER, ALAN B.;VANVECHTEN, JAMES A. |
分类号 |
G03F1/20;H01L21/203;H01L21/266;(IPC1-7):03F1/00;01L21/203;30B23/04 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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