发明名称 PARTIAL REPROGRAMMING OF SOLID-STATE NON-VOLATILE MEMORY CELLS
摘要 The present invention relates to a method and an apparatus for managing data in a memory such as a flash memory array. In accordance with some embodiments of the present invention, data are written to a set of solid-state non-volatile memory cells so that each memory cell in the set of solid-state non-volatile memory cells can be written to an associated initial programmed state. Drift in the programmed state of a selected memory cell in the set is detected, and the selected memory cell is partially reprogrammed to return the selected memory cell to the associated initial programmed state.
申请公布号 KR20150009478(A) 申请公布日期 2015.01.26
申请号 KR20140089781 申请日期 2014.07.16
申请人 SEAGATE TECHNOLOGY LLC 发明人 KHOUEIR ANTOINE;VODDI VARUN;BOWMAN RODNEY VIRGIL
分类号 G11C16/34;G11C16/06 主分类号 G11C16/34
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