发明名称 |
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
<p>The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.</p> |
申请公布号 |
KR20150008403(A) |
申请公布日期 |
2015.01.22 |
申请号 |
KR20147031696 |
申请日期 |
2013.04.19 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SATO KEN;GOTO HIROKAZU;SHIKAUCHI HIROSHI;TSUCHIYA KEITARO;SHINOMIYA MASARU;HAGIMOTO KAZUNORI |
分类号 |
H01L21/205;C23C16/34;C30B29/38;H01L21/338;H01L29/778;H01L29/812 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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