Methods of Forming Junction Termination Extension Edge Terminations for High Power Semiconductor Devices and Related Semiconductor Devices

摘要

Methods of forming a power semiconductor device having an edge termination are provided in which the power semiconductor device that has a drift region of a first conductivity type is formed on a substrate. A junction termination extension is formed on the substrate adjacent the power semiconductor device, the junction termination extension including a plurality of junction termination zones that are doped with dopants having a second conductivity type. The junction termination zones have different effective doping concentrations. A dopant activation process is performed to activate at least some of the dopants in the junction termination zones. An electrical characteristic of the power semiconductor device is measured. Then, the junction termination extension is etched in order to reduce the effective doping concentration within the junction termination extension.

主权项

1. A method of forming a power semiconductor device having an edge termination, the method comprising:
forming the power semiconductor device on a substrate; forming a junction termination extension on the substrate adjacent the power semiconductor device, the junction termination extension including a plurality of junction termination zones that are doped with dopants, the junction termination zones having different effective doping concentrations; performing a dopant activation process to activate at least some of the dopants in the junction termination zones; measuring an electrical characteristic of the power semiconductor device; and then etching the junction termination extension in order to reduce the effective doping concentration of dopants within the junction termination extension.