| 摘要 |
<p>Disclosed is a resonant tunneling diode for controlling capacitance, a producing method thereof, and a system including the same. A resonant tunneling diode according to an embodiment may include: a buffer layer for the depletion region of a channel region which generates electrons of the resonant tunneling diode and transfers the generated electrons; and a capacitance variable electrode which is located on the buffer layer and is for controlling the capacitance of the resonant tunneling diode.</p> |
