| 摘要 |
<p>An objective of the present invention is to stabilize the quality of an oxide semiconductor film, while utilizing the high mobility of an oxide semiconductor. The semiconductor device (SD) includes an oxide semiconductor layer (SML) and an electrode (EL1). The electrode (EL1) is connected to one surface of the oxide semiconductor layer (SML). A portion of the oxide semiconductor layer (SML), spanning from the one surface to a depth of t, becomes an ordered layer (ODL). The ordered layer (ODL) is an area including a plurality of ordered regions in each of which the arrangement of atoms is compliant with a specific rule. The maximum width of the ordered region in a section in a direction perpendicular to the one surface is 2 nm or less.</p> |
