| 摘要 |
The purpose of the present invention is to provide a copper target material for sputtering capable of forming a pure Cu film with low resistance as an electrode wire on a base layer included in an insulating substrate by sputtering; and a method to manufacture a copper target material for sputtering. According to the present invention, the copper target material for sputtering is formed by a cast material of oxygen-free copper whose purity is more than 99.9%, and the diameter of an average grain of a sputtering surface is 0.07-0.20 mm. Moreover, the orientation of a crystal surface of the sputtering surface is measured by an EBSD method, and the crystal surface having an inclination angle within ±15° among surfaces (111, 200, 220, 311) is included in each of surfaces (111, 200, 220, 311). The area ratio of other surfaces except for the surfaces (111, 200, 220, 311) is 15% or less when the area measured by the EBSD method is 100%. |
