Multi-gate high voltage device

摘要

A high voltage semiconductor device, particularly a device including a number of high breakdown voltage transistors having a common drain, first well, and insulating structure between the gate and the drain as well as method for using the same is provided in this disclosure. The high breakdown voltage transistors in the device together are in an elliptical shape. A second well region, gate structure, and a source region are partially overlapping discontinuous elliptical rings having at least two discontinuities or openings in a top view. The respective discontinuities or openings define each of the high breakdown voltage transistors.

主权项

1. A high voltage semiconductor device, comprising:
a lightly doped semiconductor substrate having a first type of conductivity; a first well region having a second type of conductivity and formed over the lightly doped semiconductor substrate; a second well region in the first well region and having the first type of conductivity, wherein the second well region is a discontinuous elliptical ring having at least two discontinuities in a top view; an elliptical ring-shaped first insulating structure over and partially embedded in the first well region; a gate structure partially over the first insulating structure and partially over the second well region, wherein the gate structure is a discontinuous elliptical ring having at least two openings in a top view; a drain region in a center of the first well region across the first insulating structure from the gate structure; and a source region in the second well region disposed on a side of the gate structure opposite from the drain region wherein the source region is a discontinuous elliptical ring having at least two discontinuities in a top view and wherein the at least two discontinuities in the second well region, the at least two openings in the gate structure and the at least two discontinuities in the source region are congruent.