| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a resist overlay film to be used for a lithographic process in a process of manufacturing a semiconductor device, in which the composition, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV light to selectively transmit only EUV light, without intermixing with a resist and can be developed with a developing solution after exposure.SOLUTION: The composition for forming a resist overlay film comprises: a novolac polymer containing a saturated linear or branched alkyl group having 4 to 20 carbon atoms or a saturated linear or branched alkoxy group having 4 to 20 carbon atoms; and as a solvent, an optionally substituted ether compound having 8 to 16 carbon atoms. The novolac polymer contains 35 mol% or more of unit structures containing the above alkyl group or the alkoxy group in the whole unit structures. |
