发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a surface discharge prevention effect while maintaining fatigue durability of a fixed layer.SOLUTION: A power semiconductor device comprises: an insulation ceramic layer having first and second principal surfaces, a first conductor layer being bonded onto the first principal surface while remaining a first margin part at an outer periphery, a second conductor layer being bonded onto the second principal surface while remaining a second margin part at an outer periphery; a heat radiation member on the attachment surface of which the first conductor layer is bonded; a power semiconductor element bonded to the second conductor layer; a first electrode bonded to the power semiconductor element; a second electrode bonded to the second conductor layer; an insulation frame member having an outer wall part and a shrinking part, the outer wall part adhering to a lateral face of the ceramic layer; and an encapsulation resin filled inside the frame member. Front end parts of the first and second electrodes extend from a surface of the encapsulation resin to the exterior. The first margin part of the ceramic layer adheres to the shrinking part of the frame member. The second margin part of the ceramic layer abuts on the encapsulation resin.
申请公布号 JP2015008242(A) 申请公布日期 2015.01.15
申请号 JP20130133335 申请日期 2013.06.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 BETSUSHIBA NORIYUKI;NAKAJIMA YASUSHI;ISHII RYUICHI
分类号 H01L25/07;H01L23/12;H01L23/13;H01L23/36;H01L25/18 主分类号 H01L25/07
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