SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device includes a first source electrode configured to connect a first power rail to a first impurity region, the first power rail coupled to a first voltage source, a second source electrode configured to connect a second power rail to a second impurity region, the second power rail coupled to a second voltage source, the first and second voltage sources being different, a gate electrode on the first and second impurity regions, a first drain electrode on the first impurity region, a second drain electrode on the second impurity region and an interconnection line connected to the first drain electrode and the second drain electrode, the interconnection line forming at least one closed loop.

主权项

1. A semiconductor device comprising:
a first source electrode configured to connect a first power rail to a first impurity region, the first power rail coupled to a first voltage source; a second source electrode configured to connect a second power rail to a second impurity region, the second power rail coupled to a second voltage source, the first and second voltage sources being different; a gate electrode on the first and second impurity regions; a first drain electrode on the first impurity region; a second drain electrode on the second impurity region; and an interconnection line connected to the first drain electrode and the second drain electrode, the interconnection line forming at least one closed loop.