发明名称 |
VOLTAGE MODE SENSING FOR LOW POWER FLASH MEMORY |
摘要 |
Electrically erasable flash memory and method. The memory has a data storage element and a voltage sensing circuit. The data storage element is configured to store data bits, each of the data bits having a data state. The voltage sensing circuit is selectively coupled to individual ones of data bits and is configured to bias the data bits with at least one of a bias current and a bias resistance and to read the data state of the individual ones of the plurality of data bits. |
申请公布号 |
EP2823486(A1) |
申请公布日期 |
2015.01.14 |
申请号 |
EP20130708636 |
申请日期 |
2013.03.01 |
申请人 |
MEDTRONIC INC. |
发明人 |
WALSH, KEVIN K.;PATTERSON, PAUL B.;BENTON, GLEN W.;WILKINSON, JEFFREY D. |
分类号 |
G11C16/28;G11C7/08;G11C7/14;G11C7/22;G11C11/00;G11C16/26;G11C17/12;G11C29/50 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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