| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
| 摘要 |
Disclosed are a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory cell block including a plurality of memory cells, a voltage providing unit suitable for providing a pass voltage or a read voltage to word lines coupled with the memory cells and a control circuit suitable for controlling the voltage providing unit to adjust a pass voltage applied to the memory cells disposed at one side of a selected memory cell and a pass voltage applied to the memory cells disposed at the other side of the selected memory cell based on an address of a word line of the selected memory cell among the memory cells during a read operation or a verification operation. |
| 申请公布号 |
US2015016189(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201314075823 |
申请日期 |
2013.11.08 |
| 申请人 |
SK hynix Inc. |
发明人 |
SON Myeong Cheol |
| 分类号 |
G11C16/26;G11C16/10;G11C16/04 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a memory cell block including a plurality of memory cells; a voltage providing unit suitable for providing a pass voltage or a read voltage to word lines coupled with the memory cells; and a control circuit suitable for controlling the voltage providing unit to adjust a pass voltage applied to the memory cells disposed at one side of a selected memory cell and a pass voltage applied to the memory cells disposed at the other side of the selected memory cell based on an address of a word line of the selected memory cell among the memory cells during a read operation or a verification operation. |
| 地址 |
Gyeonggi-do KR |
