发明名称 NON-VOLATILE MEMORY DEVICE AND METHOD THEREFOR
摘要 <p>A method of storing information at a non-volatile memory includes storing a first status bit at a sector header of the memory prior to erasing a sector at the memory. A second status bit is stored after erasing of the sector. Because the erasure of the sector is interleaved with the storage of the status bits, a brownout or other corrupting event during erasure of the record will likely result in a failure to store the second status bit. Therefore, the first and second status bits can be compared to determine if the data was properly erased at the non-volatile memory. Further, multiple status bits can be employed to indicate the status of other memory sectors, so that a difference in the status bits for a particular sector can indicate a brownout or other corrupting event.</p>
申请公布号 EP2524313(A4) 申请公布日期 2015.01.14
申请号 EP20110733213 申请日期 2011.01.06
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SCOULLER, ROSS S.;ANDRE, DANIEL L.;MCGINTY, STEPHEN F.
分类号 G06F12/00;G06F11/14;G06F12/02;G11C16/02;G11C16/16 主分类号 G06F12/00
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