SEMICONDUCTOR DEVICE

摘要

In a semiconductor element according to the present invention, provided is a substrate having a first region, a second region facing the first region in a first direction, and a separation trench between the first and second regions. An insulation pattern is provided in the separation trench and is provided in an element separation region. An embedded conductive pattern, which is embedded inside the insulation pattern and has an upper surface lower than an upper main surface of the substrate protruding at both sides of the separation trench, is provided, wherein the embedded conductive pattern is elongated in a second direction perpendicular to the first direction. A first gate insulation film is provided on the substrate surface and the insulation pattern. A common gate pattern, which is elongated in the first direction along upper surfaces of the first region, the element separation region, and the second region, is provided on the first gate insulation film. Source and drain regions are provided in the first and second regions at both sides of the common gate pattern, respectively. The semiconductor element can have excellent operation characteristics.