| 发明名称 |
PROCESS FOR PRODUCING THIN-FILM TRANSISTORS |
| 摘要 |
A process for producing thin-film transistors having amorphous silicon as semiconductor material whereby the amorphous silicon is doped by ion implantation through the metal layer for the drain and source contacts.
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| 申请公布号 |
CA2251438(A1) |
申请公布日期 |
1999.04.24 |
| 申请号 |
CA19982251438 |
申请日期 |
1998.10.22 |
| 申请人 |
LUEDER, ERNST |
发明人 |
LUEDER, ERNST;MAIER, GERT;ULLMANN, JOERG |
| 分类号 |
H01L21/265;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;H01L21/205;H01L21/22;H01L21/306;H01L21/335 |
主分类号 |
H01L21/265 |
| 代理机构 |
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